Hey Everyone,

STT-RAM is one of the emerging memory technologies. A tri-layer Magnetic Tunnel Junction (MTJ) is the key building block for STT-RAM. The difference between STT-RAM and MRAM is that the former uses spin-polarized current to switch instead of magnetic in order to lower down the amount of current for writing. The switching /writing mechanism is explained by the LLG equation with the additional spin torque. I read some papers about it and I got a little bit confused! The forces that act on the magnetization of the free layer comes from: magnetic anisotropy, demagnetization field, shape anisotropy and some authors add easy axis external field and sometimes with a field in the hard axis! Are these fields supposed to exist in stt-ram and what do they exactly represent?!

Thanks a lot in advance.